DocumentCode
310117
Title
Top surface-emitting laser fabricated by dual implantation using tungsten wire as a mask
Author
Du, G. ; Lin, Y. ; Jiang, X. ; Gao, D.
Author_Institution
Jilin Univ., Changchun, China
Volume
1
fYear
1994
fDate
31 Oct-3 Nov 1994
Abstract
Vertical cavity surface emitting lasers (VCSEL) have developed rapidly during the past few years. However, most of the device fabrication processes are highly complex. Recently, we designed and fabricated a new structure of the vertical-cavity top surface-emitting laser by dual implantation using a tungsten wire as the mask. This simplifies the fabrication process
Keywords
ion implantation; W; dual implantation; fabrication; mask; tungsten wire; vertical-cavity top surface-emitting laser; Gallium arsenide; Molecular beam epitaxial growth; Nonhomogeneous media; Optical design; Optical device fabrication; Power generation; Surface emitting lasers; Tungsten; Vertical cavity surface emitting lasers; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location
Boston, MA
Print_ISBN
0-7803-1470-0
Type
conf
DOI
10.1109/LEOS.1994.586991
Filename
586991
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