Title :
Top surface-emitting laser fabricated by dual implantation using tungsten wire as a mask
Author :
Du, G. ; Lin, Y. ; Jiang, X. ; Gao, D.
Author_Institution :
Jilin Univ., Changchun, China
fDate :
31 Oct-3 Nov 1994
Abstract :
Vertical cavity surface emitting lasers (VCSEL) have developed rapidly during the past few years. However, most of the device fabrication processes are highly complex. Recently, we designed and fabricated a new structure of the vertical-cavity top surface-emitting laser by dual implantation using a tungsten wire as the mask. This simplifies the fabrication process
Keywords :
ion implantation; W; dual implantation; fabrication; mask; tungsten wire; vertical-cavity top surface-emitting laser; Gallium arsenide; Molecular beam epitaxial growth; Nonhomogeneous media; Optical design; Optical device fabrication; Power generation; Surface emitting lasers; Tungsten; Vertical cavity surface emitting lasers; Wire;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-1470-0
DOI :
10.1109/LEOS.1994.586991