Title :
A novel Doping-less Bipolar Transistor with Schottky Collector
Author :
Nadda, Kanika ; Kumar, M. Jagadesh
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol. Delhi, Delhi, India
Abstract :
We propose a new device structure named as Doping-less Bipolar Transistor (DBT) with Schottky Collector in this paper. This DBT concept is suitable in overcoming doping issues such as dopant activation and high-thermal budgets, required for post ion-implantation of the base and the emitter regions of a bipolar device, which can create complications while integrating the bipolar process with the CMOS process. DBT has metal electrodes with different work-functions (φm,E <; φsi and cpm,B >; φsi ) [1], to induce (i) electrons for forming the emitter region and (ii) holes to form the base region. Due to the absence of doped regions, this device is immune to non-ideal effects such as band-gap narrowing and ionic scattering.
Keywords :
CMOS analogue integrated circuits; bipolar transistors; ion implantation; CMOS process; DBT concept; Schottky collector; band-gap narrowing; base region; bipolar process; dopant activation; dopingless bipolar transistor; emitter region; high-thermal budgets; ionic scattering; metal electrodes; post-ion implantation; work-functions; Bipolar transistors; Charge carrier processes; Doping; Electrodes; Metals; Photonic band gap; Silicon;
Conference_Titel :
Semiconductor Device Research Symposium (ISDRS), 2011 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4577-1755-0
DOI :
10.1109/ISDRS.2011.6135343
