Title :
1.3 μm wavelength, folded-cavity surface-emitting lasers fabricated by CH4/H2 angled facet reactive ion etching
Author :
Chao, Chih-Ping ; Shiau, Guang-Jye ; Forrest, Stephen R.
Author_Institution :
Dept. of Electr. Eng., Princeton Univ., NJ, USA
fDate :
31 Oct-3 Nov 1994
Abstract :
Surface-emitting lasers are useful devices for photonic integrated circuits such as optoelectronic transceivers and smart pixels. In this work, we report the fabrication of 1.3 μm wavelength InGaAsP/InP folded-cavity surface-emitting laser (FCSEL) using CH4/H2 45° angled facet reactive ion etching. A 5 μm wide by 550 μm long device has a threshold current of 45 mA, which to our knowledge is the lowest reported to date for 1.3 μm wavelength FCSELs
Keywords :
optical fabrication; 1.3 micron; 45 mA; 5 micron; 550 micron; CH4/H2 angled facet reactive ion etching; FCSEL; InGaAs-InP; fabrication; folded-cavity surface-emitting lasers; methane; threshold current; Chaos; Dry etching; Indium phosphide; Scanning probe microscopy; Surface emitting lasers; Surface waves;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-1470-0
DOI :
10.1109/LEOS.1994.586996
