DocumentCode
310123
Title
Fabrication and physics of microcavity quantum wire lasers
Author
Arakawa, Yasuhiko
Author_Institution
Dept. of Ind. Sci., Tokyo Univ., Japan
Volume
1
fYear
1994
fDate
31 Oct-3 Nov 1994
Firstpage
271
Abstract
A vertical microcavity InGaAs strained quantum wire laser was fabricated for the first time, using MOCVD selective growth. The cavity length is 4λ (λ=883nm) and the lateral width of the quantum wire is about 10nm. The cavity effect was evidenced by the difference of the photoluminescence broadening with and without the cavity. Lasing was observed at 77K by using optical pumping. Various theoretical issues on quantum nanostructure lasers including bottleneck problem and microcavity effects are also discussed in the paper
Keywords
indium compounds; 77 K; 883 nm; InGaAs; MOCVD selective growth; bottleneck; fabrication; optical pumping; photoluminescence broadening; quantum nanostructure; vertical microcavity strained quantum wire laser; Indium gallium arsenide; Laser theory; MOCVD; Microcavities; Optical device fabrication; Optical pumping; Photoluminescence; Physics; Quantum mechanics; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location
Boston, MA
Print_ISBN
0-7803-1470-0
Type
conf
DOI
10.1109/LEOS.1994.586998
Filename
586998
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