Title :
Fabrication and physics of microcavity quantum wire lasers
Author :
Arakawa, Yasuhiko
Author_Institution :
Dept. of Ind. Sci., Tokyo Univ., Japan
fDate :
31 Oct-3 Nov 1994
Abstract :
A vertical microcavity InGaAs strained quantum wire laser was fabricated for the first time, using MOCVD selective growth. The cavity length is 4λ (λ=883nm) and the lateral width of the quantum wire is about 10nm. The cavity effect was evidenced by the difference of the photoluminescence broadening with and without the cavity. Lasing was observed at 77K by using optical pumping. Various theoretical issues on quantum nanostructure lasers including bottleneck problem and microcavity effects are also discussed in the paper
Keywords :
indium compounds; 77 K; 883 nm; InGaAs; MOCVD selective growth; bottleneck; fabrication; optical pumping; photoluminescence broadening; quantum nanostructure; vertical microcavity strained quantum wire laser; Indium gallium arsenide; Laser theory; MOCVD; Microcavities; Optical device fabrication; Optical pumping; Photoluminescence; Physics; Quantum mechanics; Wire;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-1470-0
DOI :
10.1109/LEOS.1994.586998
