Title :
Long wavelength vertical cavity laser using strain-compensated multiple quantum wells on GaAs substrates
Author :
Chua, C.L. ; Lin, C.H. ; Zhu, Z.H. ; Lo, Y.H. ; Hong, M. ; Mannaerts, J.P. ; Bhat, R.
Author_Institution :
Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
fDate :
31 Oct-3 Nov 1994
Abstract :
We present an optically pumped long wavelength vertical cavity surface emitting laser using an InGaAs/InGaAsP strain-compensated multiple quantum well gain medium fabricated an a GaAs substrate. The device relies on an 800 Å-thick intermediate spin-on glass layer to join the high-gain InP-based gain medium with highly reflective GaAs-based AlAs/GaAs Bragg reflectors. At room temperature, the device operates at 1.44 μm and has a low threshold pump power of 4.2 KW/cm 2
Keywords :
quantum well lasers; 1.44 micron; AlAs-GaAs; AlAs/GaAs Bragg reflectors; GaAs; GaAs substrate; InGaAs-InGaAsP; InGaAs/InGaAsP strain-compensated multiple quantum wells; long wavelength vertical cavity surface emitting laser; optical pumping; spin-on glass; Gallium arsenide; Laser excitation; Optical pumping; Optical surface waves; Pump lasers; Quantum well lasers; Stimulated emission; Surface emitting lasers; Surface waves; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-1470-0
DOI :
10.1109/LEOS.1994.587002
