Title :
Recombination, gain and carrier leakage in (AlGa)InP visible lasers
Author :
Blood, P. ; Smowton, P.M.
Author_Institution :
Dept. of Phys. & Astron., Univ. of Wales Coll. of Cardiff, UK
fDate :
31 Oct-3 Nov 1994
Abstract :
Contributions to strain-induced changes in threshold current and (e-hh) and (e-lh) recombination currents of GaInP lasers have been quantified and the factors which control the optimisation of threshold current at fixed wavelength identified
Keywords :
aluminium compounds; (AlGa)InP visible lasers; AlGaInP; carrier leakage; electron hole recombination currents; gain; optimisation; strain; threshold current; Capacitive sensors; Current measurement; Laser theory; Laser transitions; Quantum well lasers; Radiative recombination; Spontaneous emission; Strain measurement; Temperature; Threshold current;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-1470-0
DOI :
10.1109/LEOS.1994.587023
