• DocumentCode
    3101417
  • Title

    A 450 MHz 512 kB second-level cache with a 3.6 GB/s data bandwidth

  • Author

    Bateman, B. ; Freeman, C. ; Halbert, J. ; Hose, K. ; Petrie, G. ; Reese, E.

  • Author_Institution
    Intel Corp., Hillsboro, OR, USA
  • fYear
    1998
  • fDate
    5-7 Feb. 1998
  • Firstpage
    358
  • Lastpage
    359
  • Abstract
    This 512 kB, 4-way set-associative cache SRAM for a processor is configurable as a 512 k, or larger, second-level cache using one or more cache chips. Speed between the processor and cache in separate packages is achieved by communicating over an independent source-synchronous 72 b data bus. Power is reduced by semi-synchronous design. Supply voltage is 2.5 V and maximum core power is 4.5 W at 450 MHz assuming back-to-back reads. The 0.35 /spl mu/m CMOS process features 4-level metal and a 0.22 /spl mu/m Leff.
  • Keywords
    cache storage; 0.35 micron; 2.5 V; 3.6 GB/s; 4.5 W; 459 MHz; 512 kB; CMOS process; back-to-back reads; data bandwidth; independent source-synchronous data bus; maximum core power; second-level cache; semi-synchronous design; set-associative cache SRAM; Bandwidth; Built-in self-test; Circuits; Clocks; Decoding; Hoses; Packaging; Random access memory; Testing; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 1998. Digest of Technical Papers. 1998 IEEE International
  • Conference_Location
    San Francisco, CA, USA
  • ISSN
    0193-6530
  • Print_ISBN
    0-7803-4344-1
  • Type

    conf

  • DOI
    10.1109/ISSCC.1998.672528
  • Filename
    672528