Title :
A new EOT shrinking mechanism in TiN/HfLaON HKMG MOSFET: Experimental and ab-initio study
Author :
Liang, Q. ; Xu, Q.X. ; Xu, G.B. ; Zhong, H.C. ; Zhu, H.L. ; Li, J.F. ; Zhao, C. ; Yan, J. ; Chen, D.P. ; Ye, T.C.
Author_Institution :
IC Adv. Process R&D Center, Inst. of Microelectron., Beijing, China
Abstract :
Dramatic EOT shrinking and Vfb increasing were observed when implanting Ga ions into high-k/metal-gate stack. Experiments with different gate-metal thickness, dosages, ion types, and post gate-etch anneal conditions were studied. Elastic dipole theory, for the first time, is proposed and ab-initio simulations were conducted to explain the unexpected trends. This theory offers a good guide to choose plug-in materials for high-k/metal-gate optimization.
Keywords :
MOSFET; annealing; gallium; hafnium compounds; ion implantation; lanthanum compounds; titanium alloys; EOT shrinking mechanism; HKMG MOSFET; TiN-HfLaON; ab-initio simulations; elastic dipole theory; gallium ion implantation; gate-metal dosages; gate-metal thickness; high-k-metal-gate optimization; high-k-metal-gate stack; ion types; plug-in materials; post-gate-etch anneal conditions; Atomic clocks; Hafnium compounds; High K dielectric materials; Logic gates; Silicon; Tin;
Conference_Titel :
Semiconductor Device Research Symposium (ISDRS), 2011 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4577-1755-0
DOI :
10.1109/ISDRS.2011.6135351
