Title :
Silicidation using nickel and Dysprosium stack on Si(100): NiSi2 formation and impact on Schottky Barrier Height
Author :
Lim, Phyllis Shi Ya ; Zhou, Qian ; Chi, Dongzhi ; Yeo, Yee-Chia
Author_Institution :
Dept. of Electr. & Comput. Eng, Nat. Univ. of Singapore, Singapore, Singapore
Abstract :
NiSi2 formation was report for the ΦBn reduction for Dy-incorporated Ni silicides. NiSi2 was found out to be potential contact material for the achievement of low ΦBn in field effect transistors at nm technology nodes (n-FETs). X-ray diffraction (XRD), secondary ions mass spectroscopy (SIMS) depth profile, high-resolution transmission electron microscopy (TEM) were used for analyses.
Keywords :
X-ray diffraction; dysprosium; electrical contacts; field effect transistors; nanofabrication; nickel alloys; oxidation; secondary ion mass spectra; silicon; silicon alloys; transmission electron microscopy; NiSi2-Dy; NiSi2-Si; SIMS; Schottky barrier height; TEM; X-ray diffraction; XRD; contact material; dysprosium stack; field effect transistors; high-resolution transmission electron microscopy; n-FETs; nanometer technology nodes; secondary ions mass spectroscopy depth profile; silicidation; Educational institutions; FETs; Nickel; Silicidation; Silicides; Silicon;
Conference_Titel :
Semiconductor Device Research Symposium (ISDRS), 2011 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4577-1755-0
DOI :
10.1109/ISDRS.2011.6135352
