DocumentCode
310146
Title
The state of the art of group III nitride based light emitters
Author
Akasaki, I. ; Amano, H.
Author_Institution
Meijo Univ., Nagoya, Japan
Volume
1
fYear
1994
fDate
31 Oct-3 Nov 1994
Abstract
Summary form only given. Establishment of the technology of heteroepitaxial growth of nitrides on highly-mismatched substrate, and the achievement of conductivity control of nitrides are leading to the accomplishment of high performance short wavelength light emitters
Keywords
light emitting diodes; conductivity; group III nitrides; heteroepitaxial growth; highly-mismatched substrate; short wavelength light emitters; Conductivity; Light emitting diodes; Lighting control; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location
Boston, MA
Print_ISBN
0-7803-1470-0
Type
conf
DOI
10.1109/LEOS.1994.587028
Filename
587028
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