Title :
Charge storage stability of SiO2 film electret
Author :
Fei, Yan ; Xu, Zhen ; Chen, Chong
Author_Institution :
Middle Tennessee State Univ., Murfreesboro, TN, USA
Abstract :
The SiO2 electret has received a lot of research attention recently. This important inorganic electret material emerged in 1980s. Besides having excellent charge storage stability, the SiO2 electret is fully compatible with IC planar process and micro-mechanical processing technology because it is prepared on monocrystalline silicon wafer. Therefore, it has the advantage of integration and miniaturization of all kinds of electret transducers. Other commonly used polymer electret materials may not have this property. In this paper, the effects of silicon substrate materials, chemical surface treatments, and corona charging on charge storage stability of SiO2 film electrets were studied. Some analyses and explanations based on these studies are given
Keywords :
dielectric thin films; electrets; silicon compounds; surface treatment; SiO2; charge storage stability; chemical surface treatment; corona charging; inorganic electret; silicon dioxide film; silicon substrate; Chemical technology; Electrets; Inorganic materials; Material storage; Polymers; Silicon; Stability; Substrates; Surface charging; Transducers;
Conference_Titel :
SoutheastCon 2001. Proceedings. IEEE
Conference_Location :
Clemson, SC
Print_ISBN :
0-7803-6748-0
DOI :
10.1109/SECON.2001.923077
