Title :
Shunt-Zero Based on CMOS Split-Drain: A Practical Approach for Current Sensing
Author :
Castaldo, F.C. ; Rodrigues, P. ; Filho, C. A Reis
Author_Institution :
Dept. of Electr. Eng., Universidade Estadual de Londrina
Abstract :
A current sensor circuit intended for integrated smart-power applications featuring galvanic isolation is devised. It is based on magnetic detection using the CMOS compatible split-drain transistors (MAGFET) that provides linear output current versus magnetic field from DC to several MHz range. An integrated sensor built in 0.35 mum CMOS technology presented an output conversion factor of 500 nA/A, corner frequency around 1 MHz and thermal spectral density of 60 pA/radicHz for a power dissipation of less than 15 mW
Keywords :
CMOS integrated circuits; electric sensing devices; isolation technology; magnetic fields; magnetic sensors; power integrated circuits; transistors; 0.35 mum; CMOS compatible split-drain transistors; MAGFET; current sensor circuit; galvanic isolation; integrated sensor; integrated smart-power applications; linear output current; magnetic detection; magnetic field; output conversion factor; power dissipation; thermal spectral density; CMOS technology; Frequency conversion; Galvanizing; Integrated circuit technology; Isolation technology; Magnetic fields; Magnetic sensors; Power dissipation; Thermal factors; Thermal sensors;
Conference_Titel :
Power Electronics Specialists Conference, 2005. PESC '05. IEEE 36th
Conference_Location :
Recife
Print_ISBN :
0-7803-9033-4
DOI :
10.1109/PESC.2005.1581866
