Title :
Electrical characterization of blue AlGaN/InGaN/GaN LEDs
Author :
Lee, Lena ; Osinski, Marek ; Malloy, Kevin J.
Author_Institution :
Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA
fDate :
31 Oct-3 Nov 1994
Abstract :
We report results of electrical characterization studies of Nichia NLPB500 blue LEDs. The devices incorporate an AlGaN:Mg/InGaN:Si:Zn/GaN:Si double heterostructure and were subject to high-current stress for short periods of time. The electrical characterization included IV, CV, DLTS and admittance spectroscopy. DC IV measurements showed large reverse leakage currents and diode ideality factors around n=5 at room temperature
Keywords :
deep level transient spectroscopy; AlGaN-InGaN-GaN; AlGaN/InGaN/GaN double heterostructure; CV measurements; DLTS; IV measurements; Nichia NLPB500; admittance spectroscopy; blue LEDs; electrical characterization; high-current stress; ideality factors; reverse leakage currents; Admittance; Brightness; Capacitance; Chemical industry; Chemical technology; Gallium nitride; Light emitting diodes; Temperature dependence; Thermal stresses; Voltage;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-1470-0
DOI :
10.1109/LEOS.1994.587029
