Title :
Growth and characterization of low threshold-current-density II-VI blue-green laser diodes grown by molecular beam epitaxy
Author :
Marshall, T. ; Gaines, J. ; Petruzzello, J. ; Drenten, R. ; Mensz, P. ; Haberem, K. ; Olego, D.
Author_Institution :
Philips Lab., Briarcliff Manor, NY, USA
fDate :
31 Oct-3 Nov 1994
Abstract :
We describe the growth and characterization of Zn1-xMg xSySe1-y/Zn1-uCdu Se-based laser diodes using ZnSeTe graded-gap contacts, and related materials. Contact performance, degradation and defect generation, thermal transport, and life testing are discussed
Keywords :
semiconductor lasers; II-VI blue-green laser diodes; Zn1-xMgxSySe1-y/Zn1-uCduSe; ZnMgSSe-ZnCdSe; ZnSeTe; ZnSeTe graded-gap contacts; defect generation; degradation; growth; life testing; molecular beam epitaxy; thermal transport; threshold-current-density; Contacts; Diode lasers; Laboratories; Lattices; Molecular beam epitaxial growth; Optical refraction; Photonic band gap; Substrates; Threshold current; Zinc compounds;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-1470-0
DOI :
10.1109/LEOS.1994.587030
