Transformation of charge-to-breakdown obtained from ramped current stresses into charge-to-breakdown and time-to-breakdown domains for constant current stress

Author

Dumin, Nels A.

Author_Institution

Texas Instrum. Inc., Dallas, TX, USA

fYear

1997

fDate

13-16 Oct 1997

Firstpage

134

Lastpage

135

Abstract

Summary form only given. Charge-to-breakdown (Q_BD) is one of the parameters that is used as a measure of gate oxide quality. It has been shown that, under the correct measurement conditions, there is good agreement between the Q_BD that is measured with an exponential current ramp (ECR) and the Q_BD that is measured with a constant current stress (CCS), and that Q_BD depends strongly on the ramp rate of the exponential current ramp and the current density of the constant current stress (Dumin, Int. Integrated Reliability Workshop Final Report, 1997). Previous work has shown that the breakdown distribution obtained from a linear voltage ramp can be transformed into the constant voltage stress TDDB domain for time-to-breakdown (Berman, Int. Reliability Physics Symp., pp. 204-209, 1981). Similar to this, a method is presented here for transformation of the Q_BD distribution obtained from exponential ramp experiments into the constant current stress TDDB domains of time-to-breakdown (t_BD) and Q_BD

Keywords

dielectric thin films; electric breakdown; electric charge; electric current; integrated circuit measurement; integrated circuit reliability; integrated circuit testing; transforms; breakdown distribution; charge-to-breakdown; charge-to-breakdown domain; charge-to-breakdown transformation; constant current stress; constant current stress TDDB domains; constant current stress density; constant voltage stress TDDB domain; exponential current ramp; exponential current ramp rate; gate oxide quality; linear voltage ramp; measurement conditions; ramped current stresses; time-to-breakdown; time-to-breakdown domain; Breakdown voltage; Carbon capture and storage; Current density; Current measurement; Density measurement; Design for quality; Electric breakdown; Probability; Q measurement; Stress measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report, 1997 IEEE International

Conference_Location

Lake Tahoe, CA

Print_ISBN

0-7803-4205-4

Type

conf

DOI

10.1109/IRWS.1997.660307

Filename

660307