Statistical vulnerability analysis to study intra-chip coupling of high power microwave signals

Recent studies on the vulnerability of integrated circuits (ICs) to high-intensity electromagnetic radiation have uncovered mechanisms through which high power microwave (HPM) excitation can cause errors in the operation of, increase power consumption by, or even damage to an IC [1-3]. The responses to an RF signal coupling into a trace leading to a specific pin, to which an ESD protection structure and specific electronics are connected, have been studied [4]. It is also desirable to understand the likelihood of such effects at other points of an IC besides the point of direct coupling. The metal interconnect networks and (in bulk technologies) the substrate of an IC can transmit unwanted signals, causing noise, heating and power quality problems [5,6]. Similarly, they may convey HPM excitation entering the IC to other locations, causing problems beyond the entry point. Here we present our preliminary development of a statistical method to determine what locations on an IC are likely to be most vulnerable to such secondary effects from RF signals transferred from other potential entry points.