Title :
Low-temperature fabrication of fully transparent InGaZnO thin film transistors with Ga-doped ZnO source/drain
Author :
Kim, Jung-Ho ; Kim, J. -H ; Roh, J.-H. ; Lee, K.-J. ; Do, K.-M. ; Shin, J.-H. ; Moon, B.-M. ; Koo, S.-M.
Author_Institution :
Dept. of Electr. Eng., Korea Univ., Seoul, South Korea
Abstract :
During the last decades, amorphous silicon (a-Si) has been widely used for thin film transistors (TFTs). However, the need for an alternative to a-Si TFTs for next-generation display has increased. Therefore, transparent oxide semiconductor (TOS) has gathered a great amount of attention for use in active-matrix liquid-crystal displays (AM-LCDs), organic light-emitting diodes (OLEDs), and transparent flexible displays due to its good electrical properties, low temperature processing, and high transparency [1]. Among many TOSs, amorphous InGaZnO (a-IGZO) is one of the representative materials since it has a high mobility of ~10 cm2/Vs and large area uniformity [2, 3].
Keywords :
LED displays; flexible electronics; gallium compounds; indium compounds; thin film transistors; zinc compounds; AM-LCD; InGaZnO; OLED; TFT; TOS; ZnO:Ga; active-matrix liquid-crystal displays; amorphous silicon; high mobility; low-temperature fabrication; organic light-emitting diodes; thin film transistors; transparent oxide semiconductor; Educational institutions; Glass; Hafnium compounds; Indium tin oxide; Logic gates; Plasma temperature; Thin film transistors;
Conference_Titel :
Semiconductor Device Research Symposium (ISDRS), 2011 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4577-1755-0
DOI :
10.1109/ISDRS.2011.6135362
