Analysis of subthreshold characteristics of p-MOSFETs with (0/90°) and 45° channel orientation

Author

Matsuda, T. ; Hanai, H. ; Asano, F. ; Iwata, H. ; Ohzone, T.

Author_Institution

Dept. of Inf. Syst. Eng., Toyama Prefectural Univ., Toyama, Japan

fYear

2011

fDate

7-9 Dec. 2011

Firstpage

1

Lastpage

2

Abstract

Subthreshold characteristics of CMOS devices become important for mixed signal SOCs (System On a Chip) [1]. Since matching of critical devices in important parameters such as IDsat (saturation drain current), Vτ (threshold voltage), gm (transconductance) and S (subthreshold slope) are important in CMOS analog circuit design, channel orientation and current flow direction should be carefully arranged in LSI design. In this paper, orientation dependence and asymmetry of subthreshold characteristics in 0.18 μm p MOSFET are analyzed using the test structure designed in our previous work [2].

Keywords

CMOS digital integrated circuits; MOSFET; integrated circuit design; large scale integration; mixed analogue-digital integrated circuits; system-on-chip; CMOS analog circuit design; CMOS devices; LSI design; channel orientation; current flow direction; mixed-signal SOC; orientation dependence; p-MOSFET; saturation drain current; size 0.18 mum; subthreshold characteristic asymmetry; subthreshold slope; system-on-chip; test structure; threshold voltage; transconductance; Capacitance; Educational institutions; Length measurement; Logic gates; MOSFET circuits; Radar; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium (ISDRS), 2011 International

Conference_Location

College Park, MD

Print_ISBN

978-1-4577-1755-0

Type

conf

DOI

10.1109/ISDRS.2011.6135366

Filename

6135366