DocumentCode :
3101731
Title :
Development of GIS type surge arrester applying ultra high voltage gradient ZnO element
Author :
Fukano, T. ; Mizutani, M. ; Kayano, Y. ; Kasuga, Y. ; Andoh, H.
Author_Institution :
Toshiba Corp., Kawasaki, Japan
fYear :
2012
fDate :
7-10 May 2012
Firstpage :
1
Lastpage :
5
Abstract :
Continuous efforts have been made to miniaturize surge arresters. The authors have been striving to increase the operating voltage of the ZnO elements of surge arresters, and make them more compact by reducing the number of the ZnO elements, and have succeeded in developing new ZnO elements with globally unrivaled operating voltage (Ultra high voltage gradient ZnO elements). Applying such ultra-high voltage gradient ZnO elements enables the design to be optimized and facilitates the development of the world´s most compact surge arresters.
Keywords :
II-VI semiconductors; arresters; gas insulated switchgear; wide band gap semiconductors; zinc compounds; GIS type surge arrester; ZnO; gas insulated switchgear; globally unrivaled operating voltage; ultrahigh voltage gradient element; Arresters; Surges; Temperature measurement; Thermal stability; Voltage control; Zinc oxide; Surge Arrester; Ultra high voltage gradient; ZnO element;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Transmission and Distribution Conference and Exposition (T&D), 2012 IEEE PES
Conference_Location :
Orlando, FL
ISSN :
2160-8555
Print_ISBN :
978-1-4673-1934-8
Electronic_ISBN :
2160-8555
Type :
conf
DOI :
10.1109/TDC.2012.6281450
Filename :
6281450
Link To Document :
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