• DocumentCode
    3101731
  • Title

    Development of GIS type surge arrester applying ultra high voltage gradient ZnO element

  • Author

    Fukano, T. ; Mizutani, M. ; Kayano, Y. ; Kasuga, Y. ; Andoh, H.

  • Author_Institution
    Toshiba Corp., Kawasaki, Japan
  • fYear
    2012
  • fDate
    7-10 May 2012
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    Continuous efforts have been made to miniaturize surge arresters. The authors have been striving to increase the operating voltage of the ZnO elements of surge arresters, and make them more compact by reducing the number of the ZnO elements, and have succeeded in developing new ZnO elements with globally unrivaled operating voltage (Ultra high voltage gradient ZnO elements). Applying such ultra-high voltage gradient ZnO elements enables the design to be optimized and facilitates the development of the world´s most compact surge arresters.
  • Keywords
    II-VI semiconductors; arresters; gas insulated switchgear; wide band gap semiconductors; zinc compounds; GIS type surge arrester; ZnO; gas insulated switchgear; globally unrivaled operating voltage; ultrahigh voltage gradient element; Arresters; Surges; Temperature measurement; Thermal stability; Voltage control; Zinc oxide; Surge Arrester; Ultra high voltage gradient; ZnO element;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Transmission and Distribution Conference and Exposition (T&D), 2012 IEEE PES
  • Conference_Location
    Orlando, FL
  • ISSN
    2160-8555
  • Print_ISBN
    978-1-4673-1934-8
  • Electronic_ISBN
    2160-8555
  • Type

    conf

  • DOI
    10.1109/TDC.2012.6281450
  • Filename
    6281450