Title :
Development of GIS type surge arrester applying ultra high voltage gradient ZnO element
Author :
Fukano, T. ; Mizutani, M. ; Kayano, Y. ; Kasuga, Y. ; Andoh, H.
Author_Institution :
Toshiba Corp., Kawasaki, Japan
Abstract :
Continuous efforts have been made to miniaturize surge arresters. The authors have been striving to increase the operating voltage of the ZnO elements of surge arresters, and make them more compact by reducing the number of the ZnO elements, and have succeeded in developing new ZnO elements with globally unrivaled operating voltage (Ultra high voltage gradient ZnO elements). Applying such ultra-high voltage gradient ZnO elements enables the design to be optimized and facilitates the development of the world´s most compact surge arresters.
Keywords :
II-VI semiconductors; arresters; gas insulated switchgear; wide band gap semiconductors; zinc compounds; GIS type surge arrester; ZnO; gas insulated switchgear; globally unrivaled operating voltage; ultrahigh voltage gradient element; Arresters; Surges; Temperature measurement; Thermal stability; Voltage control; Zinc oxide; Surge Arrester; Ultra high voltage gradient; ZnO element;
Conference_Titel :
Transmission and Distribution Conference and Exposition (T&D), 2012 IEEE PES
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4673-1934-8
Electronic_ISBN :
2160-8555
DOI :
10.1109/TDC.2012.6281450