DocumentCode
3101731
Title
Development of GIS type surge arrester applying ultra high voltage gradient ZnO element
Author
Fukano, T. ; Mizutani, M. ; Kayano, Y. ; Kasuga, Y. ; Andoh, H.
Author_Institution
Toshiba Corp., Kawasaki, Japan
fYear
2012
fDate
7-10 May 2012
Firstpage
1
Lastpage
5
Abstract
Continuous efforts have been made to miniaturize surge arresters. The authors have been striving to increase the operating voltage of the ZnO elements of surge arresters, and make them more compact by reducing the number of the ZnO elements, and have succeeded in developing new ZnO elements with globally unrivaled operating voltage (Ultra high voltage gradient ZnO elements). Applying such ultra-high voltage gradient ZnO elements enables the design to be optimized and facilitates the development of the world´s most compact surge arresters.
Keywords
II-VI semiconductors; arresters; gas insulated switchgear; wide band gap semiconductors; zinc compounds; GIS type surge arrester; ZnO; gas insulated switchgear; globally unrivaled operating voltage; ultrahigh voltage gradient element; Arresters; Surges; Temperature measurement; Thermal stability; Voltage control; Zinc oxide; Surge Arrester; Ultra high voltage gradient; ZnO element;
fLanguage
English
Publisher
ieee
Conference_Titel
Transmission and Distribution Conference and Exposition (T&D), 2012 IEEE PES
Conference_Location
Orlando, FL
ISSN
2160-8555
Print_ISBN
978-1-4673-1934-8
Electronic_ISBN
2160-8555
Type
conf
DOI
10.1109/TDC.2012.6281450
Filename
6281450
Link To Document