Title :
Analysis and simulation of a 45nm high-K/metal PD-SOI DTMOS under forward bias
Author :
Jimenez-P, Abimael ; Ambrosio-L, Roberto C. ; Martinez-P, Carlos A. ; Monfil-L, Karim ; Munoz-G, Jose A. ; Blanco-G, Zurika I.
Author_Institution :
Electr. & Comput. Eng. Dept., Univ. Autonoma de Ciudad Juarez, Ciudad Juárez, Mexico
Abstract :
As effective gate length and gate oxide thickness in Metal-Oxide-Semiconductor (MOS) transistors are aggressively scaled down for higher performance and circuit density, the levels for gate leakage current [1-2], standby power consumption [1-2] and gate oxide reliability [3] are degraded. Therefore, now hafnium dioxide (HfO2) is being incorporated into the gate stack of silicon based MOSFETs.
Keywords :
MOSFET; elemental semiconductors; hafnium compounds; high-k dielectric thin films; leakage currents; low-power electronics; semiconductor device reliability; silicon-on-insulator; circuit density; forward biasing; gate leakage current; gate length; gate oxide reliability; gate oxide thickness; hafnium dioxide; high-K-metal PD-SOI DTMOS simulation; metal oxide semiconductor transistors; silicon based MOSFET; size 45 nm; standby power consumption; Electric potential; Hafnium compounds; Leakage current; Logic gates; MOSFETs; Mobile communication;
Conference_Titel :
Semiconductor Device Research Symposium (ISDRS), 2011 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4577-1755-0
DOI :
10.1109/ISDRS.2011.6135370
