Title :
Hot wire chemical vapor deposited boron carbide thin film/c-silicon diode for neutron detection application
Author :
Chaudhari, Pradip ; Singh, Arvind ; Topkar, Anita ; Dusane, Rajiv
Author_Institution :
Dept. of Metall. Eng. & Mater. Sci., Indian Inst. of Technol. Bombay, Mumbai, India
Abstract :
The Boron carbide (BC) is an interesting material due to its chemical and mechanical properties like extremely hard and wear-resistant material, high melting point, low density, good thermal and electrical properties, and great resistance to chemical agents. It has very high neutron absorption cross-section area and makes boron carbide a strong candidate for high technology industries, fast-breeders, light weight armours application[1-2].
Keywords :
boron compounds; chemical vapour deposition; elemental semiconductors; neutron detection; semiconductor diodes; semiconductor growth; semiconductor thin films; silicon; BC-Si; chemical agents; chemical properties; electrical properties; extremely hard material; fast-breeders; high technology industries; hot wire chemical vapor deposited boron carbide thin film/c-silicon diode; light weight armour application; mechanical properties; melting point; neutron absorption cross-section area; neutron detection application; thermal properties; wear-resistant material; Boron; Chemical vapor deposition; Films; Neutrons; Semiconductor diodes; Silicon; Substrates;
Conference_Titel :
Semiconductor Device Research Symposium (ISDRS), 2011 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4577-1755-0
DOI :
10.1109/ISDRS.2011.6135377
