Sol-gel derived aluminum doped nanocrystalline zinc oxide for hydrogen gas sensing

Author

Hou, Yue ; Jayatissa, Ahalapitiya H.

Author_Institution

Mech., Ind. & Manuf. Eng. Dept., Univ. of Toledo, Toledo, OH, USA

fYear

2011

fDate

7-9 Dec. 2011

Firstpage

1

Lastpage

2

Abstract

Aluminum doped zinc oxide (AZO) films were synthesized on alkali free glass substrates by sol-gel spin-coating method using two different precursors (zinc acetate and zinc nitrate). The results showed that the crystallite size decreased with increasing dopant concentration. The films were fabricated using zinc acetate (precursor 1) as a starting material show a pipe-like structure, which significantly influenced the properties of films. The gas sensing tests showed the highest dopant concentration, 3 at.% aluminum doped zinc oxide film has the smallest crystalline size, dense surface, lowest resistivity and highest gas sensitivity.

Keywords

II-VI semiconductors; crystallites; doping profiles; electrical resistivity; gas sensors; hydrogen; nanofabrication; nanosensors; nanostructured materials; semiconductor growth; semiconductor thin films; sol-gel processing; spin coating; wide band gap semiconductors; zinc compounds; H₂; ZnO:Al; alkali free glass substrates; aluminum doped nanocrystalline zinc oxide films; crystallite size; dopant concentration; electrical resistivity; hydrogen gas sensing; pipe-like structure; sol-gel spin-coating; Aluminum; Doping; Films; Sensitivity; Sensors; Zinc oxide; Gas Sensing; Impurity Doping; SEM; XRD; Zinc Oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium (ISDRS), 2011 International

Conference_Location

College Park, MD

Print_ISBN

978-1-4577-1755-0

Type

conf

DOI

10.1109/ISDRS.2011.6135378

Filename

6135378