Towards sub-300 nm laser diodes on bulk AlN substrates

Author

Wunderer, T. ; Chua, C.L. ; Northrup, J.E. ; Yang, Z. ; Johnson, N.M. ; Kneissl, M. ; Garrett, G.A. ; Shen, H. ; Wraback, M. ; Moody, B. ; Craft, H.S. ; Schlesser, R. ; Dalmau, R.F. ; Sitar, Z.

Author_Institution

Palo Alto Res. Center Inc., Palo Alto, CA, USA

fYear

2011

fDate

7-9 Dec. 2011

Firstpage

1

Lastpage

2

Abstract

In this presentation, we report recent progress on development towards sub-300 nm lasers diodes by using high-quality bulk AlN substrates. The single crystal AlN substrates were fabricated from AlN boules, which were grown by physical vapor transport. They feature excellent crystalline quality with typical dislocation densities <; 10^-3 cm^-2, x-ray diffraction rocking curve values of about 20 arc sec for the (002)-reflection, and rms surface roughness of 0.1 nm.

Keywords

III-V semiconductors; X-ray diffraction; aluminium compounds; dislocation density; gallium compounds; integrated optics; semiconductor lasers; surface roughness; Al_xGa_1-xN-Al_yGa_1-yN; AlN; X-ray diffraction rocking curve; bulk AlN substrates; crystalline quality; dislocation densities; laser diodes; physical vapor transport; rms surface roughness; single crystal substrates; Aluminum gallium nitride; Diode lasers; Laser excitation; Substrates; Surface emitting lasers; USA Councils;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium (ISDRS), 2011 International

Conference_Location

College Park, MD

Print_ISBN

978-1-4577-1755-0

Type

conf

DOI

10.1109/ISDRS.2011.6135381

Filename

6135381