Title :
Towards sub-300 nm laser diodes on bulk AlN substrates
Author :
Wunderer, T. ; Chua, C.L. ; Northrup, J.E. ; Yang, Z. ; Johnson, N.M. ; Kneissl, M. ; Garrett, G.A. ; Shen, H. ; Wraback, M. ; Moody, B. ; Craft, H.S. ; Schlesser, R. ; Dalmau, R.F. ; Sitar, Z.
Author_Institution :
Palo Alto Res. Center Inc., Palo Alto, CA, USA
Abstract :
In this presentation, we report recent progress on development towards sub-300 nm lasers diodes by using high-quality bulk AlN substrates. The single crystal AlN substrates were fabricated from AlN boules, which were grown by physical vapor transport. They feature excellent crystalline quality with typical dislocation densities <; 10-3 cm-2, x-ray diffraction rocking curve values of about 20 arc sec for the (002)-reflection, and rms surface roughness of 0.1 nm.
Keywords :
III-V semiconductors; X-ray diffraction; aluminium compounds; dislocation density; gallium compounds; integrated optics; semiconductor lasers; surface roughness; AlxGa1-xN-AlyGa1-yN; AlN; X-ray diffraction rocking curve; bulk AlN substrates; crystalline quality; dislocation densities; laser diodes; physical vapor transport; rms surface roughness; single crystal substrates; Aluminum gallium nitride; Diode lasers; Laser excitation; Substrates; Surface emitting lasers; USA Councils;
Conference_Titel :
Semiconductor Device Research Symposium (ISDRS), 2011 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4577-1755-0
DOI :
10.1109/ISDRS.2011.6135381
