Electrical characteristics of SiGe MOSFETs integrated with Tantalum or Titanium oxynitride higher-k gate dielectrics

Author

Li, Chen-Chien ; Chang-Liao, Kuei-Shu ; Fu, Chung-Hao ; Tzeng, Te-Hsuen ; Wang, Tien-Ko ; Tsai, Wen-Fa ; Ai, Chi-Fong

Author_Institution

Dept. of Eng. & Syst. Sci., Nat. Tsing Hua Univ., Hsinchu, Taiwan

fYear

2011

fDate

7-9 Dec. 2011

Firstpage

1

Lastpage

2

Abstract

Metal oxide semiconductor field effect transistors (MOSFET) with SiGe channel and higher-k gate dielectric are studied in this work. Samples with TaON/HfO₂ or TiON/HfO₂ stacks show larger drain current, transconductance, and smaller subthreshold swing than that with single HfO₂ layer. In addition, the reliability of SiGe MOSFET device is clearly improved with TaON/HfO₂ stacks in terms of degradation of Gm and Vth after hot-carrier stress. The integration of SiGe channel with TaON/HfO₂ higher-k dielectric is useful for high-performance MOSFETs.

Keywords

Ge-Si alloys; MOSFET; hafnium compounds; high-k dielectric thin films; hot carriers; semiconductor device reliability; semiconductor materials; tantalum compounds; MOSFET device reliability; TaON-HfO₂; TiON-HfO₂; drain current; electrical characteristics; hot-carrier stress; metal oxide semiconductor field effect transistors; silicon-germanium MOSFET; subthreshold swing; tantalum oxynitride higher-k gate dielectrics; titanium oxynitride higher-k gate dielectrics; transconductance; Degradation; Dielectrics; Hafnium oxide; High K dielectric materials; MOSFETs; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium (ISDRS), 2011 International

Conference_Location

College Park, MD

Print_ISBN

978-1-4577-1755-0

Type

conf

DOI

10.1109/ISDRS.2011.6135387

Filename

6135387