Title :
Effects of oxygen content and capping metal layer on bipolar switching properties of HfO2-based resistive random access memory devices
Author :
Li, Chen-Chien ; Chang-Liao, Kuei-Shu ; Chen, Ying-Chan ; Fu, Chung-Hao ; Liu, Li-Jung ; Wang, Tien-Ko
Author_Institution :
Dept. of Eng. & Syst. Sci., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
The HfO2 based insulator is promising for resistive random access memory (RRAM). At first in this work, the effects of different oxygen contents in sputtered HfO2 on resistive switching memory are investigated. It is observed that the oxygen flux rate would strongly affect the LRS/HRS current ratio and operation voltage. The switching behavior can be attributed to oxygen vacancy assisted conduction filament formation and annihilation. Then, the effects of Ti and Zr capping metal layers on RRAM devices with ALD-HfO2 insulator are studied. Resistive switching behavior, temperature-dependence retention, and cycling endurance are strongly affected by the property of capping metal layer.
Keywords :
hafnium compounds; oxygen; random-access storage; vacancies (crystal); HfO2; LRS-HRS current ratio; RRAM; annihilation; bipolar switching properties; capping metal layer; conduction filament formation; cycling endurance; oxygen content; oxygen vacancy; resistive random access memory devices; resistive switching behavior; resistive switching memory; temperature-dependence retention; Argon; Hafnium compounds; Insulators; Resistance; Switches; Zirconium;
Conference_Titel :
Semiconductor Device Research Symposium (ISDRS), 2011 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4577-1755-0
DOI :
10.1109/ISDRS.2011.6135389
