Title :
Qbd dependence on stress and test structure parameters: A review
Author :
Martin, Andreas ; O´Sullivan, Pat ; Mathewson, Alan
Author_Institution :
Technol. Characterisation & Modelling Group, Nat. Microelectron. Res. Centre, Cork, Ireland
Abstract :
This paper gives a review of charge-to-breakdown data which has been reported in the literature for SiO2 layers grown on single crystalline silicon. The different trends of charge-to-breakdown characteristics monitored for various stress conditions and structure designs are discussed. This work demonstrates that a good understanding of the stress method, the stress parameters and the test structures is essential for the correct interpretation of the charge-to-breakdown
Keywords :
dielectric thin films; electric breakdown; integrated circuit reliability; integrated circuit testing; silicon compounds; Si; SiO2 layers; SiO2-Si; charge-to-breakdown; charge-to-breakdown characteristics; single crystalline silicon substrate; stress conditions; stress method; stress parameters; test structure designs; test structure parameters; test structures; Acceleration; Carbon capture and storage; Current density; Current measurement; Design for quality; Doping; Extrapolation; Stress; Testing; Voltage;
Conference_Titel :
Integrated Reliability Workshop Final Report, 1997 IEEE International
Conference_Location :
Lake Tahoe, CA
Print_ISBN :
0-7803-4205-4
DOI :
10.1109/IRWS.1997.660310
