Title :
Improved characteristics of charge-trapping flash device with tunneling layer formed by low temperature nitrogen-rich SiN/SiO2 stack
Author :
Chen, Chun-Yuan ; Chang-Liao, Kuei-Shu ; Ho, Ji-Jan ; Wang, Tien-Ko
Author_Institution :
Dept. of Eng. & Syst. Sci., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
For better performance on charge-trapping(CT) flash device, tunneling layer stacks of nitrogen(N)-rich SiN/SiO2 and low temperature(LT) N-rich SiN/SiO2 are studied. The programming and erasing speeds of CT flash device are significantly improved by the tunneling layer stacks due to the lower conduction and valence band offsets of N-rich and LT N-rich SiN. The retention properties of CT flash devices with standard SiN trapping layer are satisfactory.
Keywords :
flash memories; silicon compounds; tunnelling; CT flash device; LT N-rich stack; SiN-SiO2; charge-trapping flash device; erasing speed; low-temperature nitrogen-rich stack; programming speed; retention properties; trapping layer; tunneling layer stacks; valence band offsets; Charge carrier processes; Educational institutions; Photonic band gap; Programming; Silicon compounds; Temperature; Tunneling;
Conference_Titel :
Semiconductor Device Research Symposium (ISDRS), 2011 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4577-1755-0
DOI :
10.1109/ISDRS.2011.6135390
