Title :
Degradation of the characteristics of p+ poly MOS capacitors with NO nitrided gate oxide due to post nitrogen annealing
Author :
Mazumder, Malay K. ; Teramoto, A. ; Kobayashi, K. ; Sekine, M. ; Kawazu, S. ; Koyama, H.
Author_Institution :
ULSI Lab., Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
Summary form only given. Wet oxides annealed in NO ambient for two different temperatures and degradation due to post N2 annealing on the characteristics of p+ poly MOS capacitors have been investigated. Results show that samples with N2 post annealing at 900°C have a large increase in leakage current and charge trapping compared with samples without N2 post annealing. Although NO annealing improves the SiO2-Si interface, post annealing in N2 at a high temperature of 900°C for 30 minutes may diffuse boron from the p+ poly to the gate oxide, and hence degrades the characteristics of p+ poly Si gate oxide
Keywords :
CMOS integrated circuits; MOS capacitors; annealing; dielectric thin films; elemental semiconductors; integrated circuit reliability; integrated circuit testing; integrated circuit yield; nitridation; nitrogen; nitrogen compounds; silicon; 30 min; 900 C; CMOS ICs; N2; N2 post annealing; NO; NO ambient; NO annealing; NO nitrided gate oxide; Si; SiO2-Si; SiO2-Si interface; SiON-Si; SiON:B-Si; anneal temperature; boron diffusion; charge trapping; gate oxide; leakage current; p+ poly MOS capacitors; p+ poly Si gate oxide degradation; post nitrogen annealing; wet oxides; Annealing; Boron; Degradation; Leakage current; MOS capacitors; Nitrogen; Oxidation; Stress; Temperature dependence; Ultra large scale integration;
Conference_Titel :
Integrated Reliability Workshop Final Report, 1997 IEEE International
Conference_Location :
Lake Tahoe, CA
Print_ISBN :
0-7803-4205-4
DOI :
10.1109/IRWS.1997.660311
