A 23mW 4.5/8 GHz IR-UWB transmitter in 65nm TSMC CMOS technology

Author

Donno, A. ; D´Amico, S. ; De Matteis, M. ; Baschirotto, A.

Author_Institution

Dept. of Innovation Eng., Univ. of Salento, Lecce, Italy

fYear

2013

fDate

24-27 June 2013

Firstpage

225

Lastpage

228

Abstract

This paper presents a low power transmitter for Impulse-Radio Ultra-Wideband (IR-UWB) applications. It generate short duration bi-phase modulated UWB pulses with a center frequency of 4.5 / 8 GHz according to the selected channel. A simplified transmitter architecture enabling low power consumption has been adopted. The key circuit is a phase shifter used to obtain positive and negative pulses. Generated pulses comply with requirements of the IEEE 802.15.4a standard. The transmitter is designed in 65nm CMOS technology. Simulations results show that the transmitter consumes 23 mW peak power from a 1.2V supply at 8 GHz of work frequency.

Keywords

CMOS integrated circuits; Zigbee; microwave integrated circuits; microwave phase shifters; phase modulation; pulse modulation; radio transmitters; ultra wideband communication; wireless channels; IEEE 802.15.4a standard; IR-UWB; TSMC CMOS Technology; frequency 4.8 GHz; frequency 8 GHz; low power impulse-radio ultrawideband transmitter application; negative pulse; phase shifter; positive pulse; power 23 mW; power consumption; short duration biphase modulated UWB pulse; size 65 nm; voltage 1.2 V; CMOS integrated circuits; IEEE 802.15 Standards; Phase shifters; Power demand; Radio transmitters; CMOS; impulse radio; transmitter; ultrawideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Ph.D. Research in Microelectronics and Electronics (PRIME), 2013 9th Conference on

Conference_Location

Villach

Print_ISBN

978-1-4673-4580-4

Type

conf

DOI

10.1109/PRIME.2013.6603148

Filename

6603148