Title :
A macromodel for FLOTOX EEPROM
Author :
Meng, Ming ; Noren, K.V.
Author_Institution :
Intel Corp., Hillsboro, OR, USA
Abstract :
A macromodel for FLOTOX EEPROM cell is presented. The model is suitable for DC and transient simulations and programming/erasing cycles. The modeled characteristics include threshold voltage changes, drain current, tunneling current, and charge retention. Model simulations are presented and compared with measurement data available in the literature
Keywords :
EPROM; SPICE; circuit analysis computing; digital simulation; integrated circuit modelling; transient analysis; tunnelling; DC simulation; FLOTOX EEPROM; SPICE; charge retention; drain current; macromodel; model simulation; programming/erasing cycles; threshold voltage changes; transient simulation; tunneling current; Capacitance; Character generation; Circuit simulation; Computational modeling; EPROM; Electrons; Microprocessors; Nonvolatile memory; Threshold voltage; Tunneling;
Conference_Titel :
Circuits and Systems, 1996., IEEE 39th Midwest symposium on
Conference_Location :
Ames, IA
Print_ISBN :
0-7803-3636-4
DOI :
10.1109/MWSCAS.1996.594022
