Title :
The impact of emitter fingers layout and geometry on InGaP HBT thermal resistance
Author :
Yu, Evan F. ; Hill, Darrell G. ; Zhang, Lisa ; Hartin, Olin L.
Author_Institution :
Microwave & Mixed-Signal Technol. Lab., Freescale Semicond., Inc, Tempe, AZ, USA
Abstract :
As InGaP heterojunction bipolar transistors are becoming widely used for wireless handset power amplifier applications, it is not only in the best interests of device and circuit reliability, but also for devices performance, to optimize thermal management through proper device design. In this work, we report a thermal analysis on multi emitter-finger HBT devices with various emitter finger geometry and layout options. Three techniques, including direct electrical measurement and extraction, high resolution (∼3 μm) infared (IR) thermal imaging, as well as thermal simulation (ANSYS), were employed in the study.
Keywords :
III-V semiconductors; finite element analysis; gallium compounds; heterojunction bipolar transistors; indium compounds; infrared imaging; optimisation; semiconductor device measurement; semiconductor device reliability; thermal analysis; thermal management (packaging); thermal resistance; thermal resistance measurement; HBT thermal resistance; InGaP; circuit reliability; device reliability; emitter finger geometry; emitter finger layout; finite element thermal simulation; high resolution IR thermal imaging; multiple-emitter-finger HBT devices; thermal analysis; thermal management optimization; wireless handset power amplifiers; Circuits; Design optimization; Energy management; Fingers; Geometry; Heterojunction bipolar transistors; Power amplifiers; Telephone sets; Thermal management; Thermal resistance;
Conference_Titel :
ROCS Workshop, 2004.[Reliability of Compound Semiconductors]
Print_ISBN :
0-7908-0105-1
DOI :
10.1109/ROCS.2004.184342
