Improving the luminescence of InGaN/GaN blue LEDs through selective ring-region ion implantation

Author

Wu, Chia-Hsuan ; Lin, Yung-Hsiang ; Lin, Che-Kai ; Chiu, Hsien-Chin ; Lin, Ray-Ming

Author_Institution

Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan

fYear

2009

fDate

13-17 July 2009

Firstpage

1

Lastpage

2

Abstract

In this study, we used the selective ring-region ion implantation technique to restrain the surface leakage current and to monitor the luminescence characteristics of InGaN/GaN multiple quantum-well blue light-emitting diodes (LEDs). The luminescence characteristics could be improved by varying the width of the highly resistive region of the current blocking area; and the leakage current also can be reduced.

Keywords

III-V semiconductors; gallium compounds; indium compounds; ion implantation; leakage currents; light emitting diodes; luminescence; quantum well devices; wide band gap semiconductors; InGaN-GaN; blue light-emitting diodes; luminescence; multiple quantum-well light-emitting diodes; selective ring-region ion implantation; surface leakage current; Energy consumption; Gallium nitride; Ion implantation; Leakage current; Light emitting diodes; Luminescence; Monitoring; Quantum well devices; Surface waves; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

OptoElectronics and Communications Conference, 2009. OECC 2009. 14th

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-4102-0

Electronic_ISBN

978-1-4244-4103-7

Type

conf

DOI

10.1109/OECC.2009.5213211

Filename

5213211