Title :
Minimizing gate lag of a planar high-power GaAs MESFET by Al2O3 passivation and optimized gate process
Author :
Yang, B. ; Ye, P.D. ; Ng, K. ; Bude, J. ; Wilk, G.
Author_Institution :
Agere Syst., PA, USA
Abstract :
This study demonstrates that using ALD grown Al2O3 as a surface passivation layer, and by controlling the Al2O3 over-etch time, the gate lag of a planar high power GaAs MESFET can be controlled to an undetectable level. In addition, more than 30 V higher Vbkd was achieved when the Al2O3 surface passivation layer was employed. These results indicate that the above reported GaAs MESFET device is very promising for wireless base station high-power amplifier applications.
Keywords :
III-V semiconductors; alumina; atomic layer deposition; gallium arsenide; optimisation; passivation; power MESFET; ALD grown passivation layer; GaAs-Al2O3; MESFET gate lag minimization; gate process optimization; over-etch time control; planar high-power MESFET; surface passivation layer; wireless base station high-power amplifier; Degradation; Fabrication; Gallium arsenide; Hafnium; MESFETs; Passivation; Power generation; RF signals; Radio frequency; Wet etching;
Conference_Titel :
ROCS Workshop, 2004.[Reliability of Compound Semiconductors]
Print_ISBN :
0-7908-0105-1
DOI :
10.1109/ROCS.2004.184347
