Reliability of GaAs PIN switches for high frequency and high power applications

Author

Yang, Xinxing ; Ersland, Peter ; Hoag, David

Author_Institution

Tyco Electron., Lowell, MA, USA

fYear

2004

fDate

24 Oct. 2004

Firstpage

135

Lastpage

149

Abstract

M/A-COM´s monolithic GaAs PIN diode integrated circuit process has been used in high frequency switching applications for many years. A recent application of this process identified a unique failure mode related to operation at high RF power and low frequency. Under these high power conditions, switch insertion loss was seen to increase, particularly at lower frequencies (below 10 GHz). In an effort to better understand this failure mode, a series of reliability experiments were performed. Subsequent changes to this process were also subjected to process reliability tests.

Keywords

III-V semiconductors; gallium arsenide; life testing; microwave diodes; p-i-n diodes; power semiconductor diodes; power semiconductor switches; semiconductor device reliability; semiconductor device testing; 125 degC; GaAs; high frequency PIN switches; high power PIN diodes; life tests; low frequency failure mode; reliability testing; switch insertion loss; Application specific integrated circuits; Gallium arsenide; Insertion loss; Integrated circuit reliability; Monolithic integrated circuits; Radio frequency; Radiofrequency identification; Switches; Switching circuits; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

ROCS Workshop, 2004.[Reliability of Compound Semiconductors]

Print_ISBN

0-7908-0105-1

Type

conf

DOI

10.1109/ROCS.2004.184354

Filename

1424946