• DocumentCode
    3105606
  • Title

    The high mobility a-plane GaN film grown with flow-rate modulation epitaxy

  • Author

    Wu, Chan-Shou ; Liang, Tsair-Chun ; Cheng, Wei-Chih

  • Author_Institution
    Grad. Inst. of Electro-Opt. Eng., Nat. Kaohsiung First Univ. of Sci. & Technol., Kaohsiung, Taiwan
  • fYear
    2009
  • fDate
    13-17 July 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    A-plane n-GaN film has been grown on r-plane sapphire substrate by MOCVD with flow-rate modulation (FME). Under the used growth conditions, the optimized FME parameters include the on/off periods at 60/80 s. With the FME technique, the n-GaN film has a high Hall mobility of 779 cm2/V-s.
  • Keywords
    Hall mobility; III-V semiconductors; MOCVD coatings; gallium compounds; wide band gap semiconductors; Hall mobility; MOCVD; flow-rate modulation epitaxy; high mobility a-plane film; r-plane sapphire substrate; Dielectric substrates; Diode lasers; Electrooptic modulators; Epitaxial growth; Gallium nitride; Hall effect; Light emitting diodes; MOCVD; Temperature; X-ray scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    OptoElectronics and Communications Conference, 2009. OECC 2009. 14th
  • Conference_Location
    Hong Kong
  • Print_ISBN
    978-1-4244-4102-0
  • Electronic_ISBN
    978-1-4244-4103-7
  • Type

    conf

  • DOI
    10.1109/OECC.2009.5213220
  • Filename
    5213220
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3105606