Quantum centroid modeling for surrounding gate MOSFETs

Author

Vimala, P. ; Balamurugan, N.B.

Author_Institution

Dept. of ECE, Thiagarajar Coll. of Eng., Madurai, India

fYear

2012

fDate

28-29 Dec. 2012

Firstpage

168

Lastpage

171

Abstract

The present analysis proposes an analytical model of gate-all-around/surrounding gate (GAA/SG) MOSFETs for centroid including quantum mechanical (QM) effects. To obtain the QM effects of SGT, the coupled Poisson and Schrodinger equations are solved using variational approach. This model is developed to provide an analytical expression for inversion charge distribution function (ICDF). The obtained ICDF is used to calculate the inversion charge centroid. The accuracy of the model is verified by comparing the data obtained by Simulations.

Keywords

MOSFET; Poisson equation; Schrodinger equation; quantum theory; semiconductor device models; Schrodinger equations; coupled Poisson equations; gate-all-around MOSFET; inversion charge centroid; inversion charge distribution function; quantum centroid modeling; quantum mechanical effects; surrounding gate MOSFET; Decision support systems; Intelligent systems; Logic gates; MOSFETs; Performance evaluation; Schrodinger equation; Silicon; Centroid; Quantum effects; Surrounding Gate; Variational approach;

fLanguage

English

Publisher

ieee

Conference_Titel

Communications, Devices and Intelligent Systems (CODIS), 2012 International Conference on

Conference_Location

Kolkata

Print_ISBN

978-1-4673-4699-3

Type

conf

DOI

10.1109/CODIS.2012.6422163

Filename

6422163