Title :
A novel modeling of gain profile of the MQW-SOAs
Author :
Shimizu, S. ; Uenohara, H.
Author_Institution :
Precision & Intell. Lab., Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
We introduce a novel modeling of gain profile of MQW-SOAs that takes the variation of gain spectrum with carrier density into account. Simulation results of static and dynamic operation agree well with the experimental ones.
Keywords :
carrier density; quantum well lasers; semiconductor optical amplifiers; carrier density; dynamic operation; gain profile modeling; gain spectrum; multi quantum well; semiconductor optical amplifier; static operation; Charge carrier density; Numerical simulation; Optical signal processing; Optical wavelength conversion; Polynomials; Quantum well devices; Repeaters; Semiconductor optical amplifiers; Shape; Signal processing;
Conference_Titel :
OptoElectronics and Communications Conference, 2009. OECC 2009. 14th
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-4102-0
Electronic_ISBN :
978-1-4244-4103-7
DOI :
10.1109/OECC.2009.5213291
