Title :
A Doherty amplifier for TD-SCDMA base station applications based on a single packaged dual-path integrated LDMOS power transistor
Author :
Wang, Guogong ; Zhao, Lei ; Szymanowski, Margaret
Author_Institution :
RF Div., Freescale Semicond., Inc., Tempe, AZ, USA
Abstract :
A Doherty power amplifier designed for TDSCDMA base station applications using a dual path two-stage IC with LDMOS technology has been demonstrated with excellent performance. The IC was fabricated using Freescale HV7IC technology and designed to cover both the 1.88-1.92 GHz and the 2.01-2.025 GHz TD-SCDMA bands. It delivers 70 W P3dB output power under CW signal. At 40 dBm output power or 8.5 dB output back off at P3dB gain compression, the Doherty power amplifier exhibits 30.2 dB power gain, 35.4% power added efficiency and -32.5 dBc raw ACPR under 7.1 dB PAR TDSCDMA modulation in the 2.01-2.025 GHz band. A -52.8 dBc ACPR was obtained after digital pre-distortion. This is the first Doherty power amplifier for the TD-SCDMA applications using a single dual-path integrated power transistor in over-molded plastic package reported to date.
Keywords :
MOS integrated circuits; code division multiple access; power amplifiers; power transistors; Doherty amplifier; Doherty power amplifier; LDMOS technology; TD-SCDMA base station application; dual path two-stage IC; freescale HV7IC technology; frequency 1.88 GHz to 1.92 GHz; frequency 2.01 GHz to 2.025 GHz; single packaged dual-path integrated LDMOS power transistor; Base stations; Multiaccess communication; Mutual coupling; Plastic packaging; Power amplifiers; Power transistors; Radio frequency; Radiofrequency amplifiers; Semiconductor optical amplifiers; Time division synchronous code division multiple access; Doherty amplifier; LDMOS; Power amplifier; TD-SCDMA;
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2010.5515797
