Title :
Effect Of MOS Device Scaling On Process Induced Gate Charging
Author :
Alavi, Mohsen ; Jacobs, Steve ; Ahmed, Shahriar ; Chern, Chan-Hong ; Mcgregor, Paul
Author_Institution :
Intel Corporation
Keywords :
Breakdown voltage; Degradation; Diodes; Electric breakdown; MOS devices; Plasma measurements; Protection; Stress; Thickness measurement; Tunneling;
Conference_Titel :
Plasma Process-Induced Damage, 1997., 2nd International Symposium on
Conference_Location :
Monterey, California, USA
Print_ISBN :
0-9651-5771-7
DOI :
10.1109/PPID.1997.596667
