DocumentCode :
310830
Title :
Scalability Of Plasma Damage With Gate Oxide Thickness
Author :
Bayoumi, Amr ; Ma, Shawming ; Langley, Brian ; Cox, Mike ; Tavassoli, Malahat ; Diaz, Carlos ; Cao, Min ; Marcoux, Paul ; Ray, Gary ; Greene, W.
Author_Institution :
Hewlett-Packard Co.
fYear :
1997
fDate :
13-14 May 1997
Firstpage :
11
Lastpage :
14
Keywords :
Dielectrics; Electric breakdown; Implants; Plasma applications; Plasma devices; Plasma materials processing; Plasma sources; Scalability; Testing; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Process-Induced Damage, 1997., 2nd International Symposium on
Conference_Location :
Monterey, California, USA
Print_ISBN :
0-9651-5771-7
Type :
conf
DOI :
10.1109/PPID.1997.596669
Filename :
596669
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=310830
