DocumentCode
3108338
Title
Influence of RF power density on the nanocrystallization of Ar diluted Si:H thin films deposited by PECVD
Author
Li, Zhi ; Li, Wei ; Haihong, Cai ; Yuguang, Gong ; Yijiao, Qiu ; Yadong, Jiang
Author_Institution
State key Lab. of Electron. Thin Films & Integrated Devices, UESTC, Chengdu, China
fYear
2009
fDate
13-17 July 2009
Firstpage
1
Lastpage
2
Abstract
Hydrogenated silicon (Si:H) thin films were deposited at a selected argon diluting ratio under varied RF power density and the influence of it on nanocrystallization was studied by XRD, FTIR and Raman spectroscopy.
Keywords
Fourier transform spectra; Raman spectra; X-ray diffraction; amorphous semiconductors; crystallisation; elemental semiconductors; hydrogen; infrared spectra; nanostructured materials; nanotechnology; plasma CVD; plasma CVD coatings; semiconductor growth; semiconductor thin films; silicon; Ar diluted Si:H thin film; FTIR spectroscopy; PECVD; RF power density; Raman spectroscopy; Si:H; XRD; a-Si:H thin film; hydrogenated amorphous silicon; nanocrystallization; Argon; Crystallization; Grain size; Optical films; Radio frequency; Semiconductor thin films; Silicon; Sputtering; Thin film devices; X-ray scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
OptoElectronics and Communications Conference, 2009. OECC 2009. 14th
Conference_Location
Hong Kong
Print_ISBN
978-1-4244-4102-0
Electronic_ISBN
978-1-4244-4103-7
Type
conf
DOI
10.1109/OECC.2009.5213770
Filename
5213770
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