DocumentCode :
310834
Title :
Leakage Current Due To Plasma Induced Damage In Thin Gate Oxide MOS Transistors
Author :
Sridharan, Arun ; Oh, Jeffrey ; Werking, James ; Brozek, Tomasz ; Viswanathan, Chand R.
Author_Institution :
University of Californi, Los Angeles
fYear :
1997
fDate :
13-14 May 1997
Firstpage :
29
Lastpage :
32
Keywords :
Antenna measurements; Current measurement; Etching; Leakage current; Low voltage; MOS devices; MOSFETs; Plasma devices; Plasma materials processing; Plasma measurements;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Process-Induced Damage, 1997., 2nd International Symposium on
Conference_Location :
Monterey, California, USA
Print_ISBN :
0-9651-5771-7
Type :
conf
DOI :
10.1109/PPID.1997.596675
Filename :
596675
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=310834
بازگشت