DocumentCode :
310839
Title :
Analysis Of Injection Current Through Thin Gate Oxide During Metal Etch
Author :
Kinoshita, Takashi ; Krishnan, Srikanth ; Dostalik, Willam W. ; McVittie, James P.
Author_Institution :
Texas Instruments
fYear :
1997
fDate :
13-14 May 1997
Firstpage :
45
Lastpage :
48
Keywords :
Analytical models; Boundary conditions; Electrons; Etching; Plasma applications; Plasma density; Plasma simulation; Steady-state; Surface charging; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Process-Induced Damage, 1997., 2nd International Symposium on
Conference_Location :
Monterey, California, USA
Print_ISBN :
0-9651-5771-7
Type :
conf
DOI :
10.1109/PPID.1997.596687
Filename :
596687
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=310839
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