DocumentCode
3108495
Title
Measurement of IGBT switching frequency limits
Author
Sheng, K. ; Williams, B.W. ; He, X. ; Qian, Zhiming ; Finney, S.J.
Author_Institution
Dept. of Comput. & Electr. Eng., Heriot-Watt Univ., Edinburgh, UK
Volume
1
fYear
1999
fDate
36373
Firstpage
376
Abstract
In this paper methods of obtaining IGBT switching frequency limits are discussed. A new nondestructive measurement method is proposed and verified by experimentation. The measured results agree with calculations based on IGBT loss components. This method can also be used to monitor other power bipolar devices in switching circuits
Keywords
frequency measurement; insulated gate bipolar transistors; losses; nondestructive testing; power semiconductor switches; semiconductor device measurement; switching; IGBT loss components; IGBT switching frequency limits measurement; nondestructive measurement method; power bipolar devices; switching circuits; Frequency measurement; Insulated gate bipolar transistors; Loss measurement; Switches; Switching circuits; Switching frequency; Switching loss; Temperature; Thermal resistance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 1999. PESC 99. 30th Annual IEEE
Conference_Location
Charleston, SC
ISSN
0275-9306
Print_ISBN
0-7803-5421-4
Type
conf
DOI
10.1109/PESC.1999.789031
Filename
789031
Link To Document