• DocumentCode
    310852
  • Title

    Behaviors Of Plasma-induced Pre-tunneling Leakage Current In MOS Capacitor

  • Author

    Fukumoto, Y. ; Nishizuka, T. ; Ohmoto, S. ; Inoue, T. ; Nozawa, T. ; Nakaue, A.

  • Author_Institution
    Kobe Steel, Ltd.
  • fYear
    1997
  • fDate
    13-14 May 1997
  • Firstpage
    99
  • Lastpage
    101
  • Keywords
    Antenna measurements; Current measurement; Delay effects; Design for quality; Leakage current; MOS capacitors; Plasma devices; Plasma measurements; Stress; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Plasma Process-Induced Damage, 1997., 2nd International Symposium on
  • Conference_Location
    Monterey, California, USA
  • Print_ISBN
    0-9651-5771-7
  • Type

    conf

  • DOI
    10.1109/PPID.1997.596705
  • Filename
    596705
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=310852