DocumentCode :
310880
Title :
Correlation Of Plasma-induced Charging Voltage Measured In-situ By Microelectromechanical Sensors With Device Degradation
Author :
Pangal, Kiran ; Sturm, J.C.
Author_Institution :
Princeton University
fYear :
1997
fDate :
13-14 May 1997
Firstpage :
203
Lastpage :
206
Keywords :
Degradation; Laser beams; MOS capacitors; Plasma applications; Plasma devices; Plasma displays; Plasma materials processing; Plasma measurements; Surface charging; Voltage measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Process-Induced Damage, 1997., 2nd International Symposium on
Conference_Location :
Monterey, California, USA
Print_ISBN :
0-9651-5771-7
Type :
conf
DOI :
10.1109/PPID.1997.596745
Filename :
596745
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=310880
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