A high efficiency normally-off MODFET power MMIC for PHS operating under 3.0 V single-supply condition

Author

Kunihisha, T. ; Yokoyama, T. ; Nishijima, M. ; Yamamoto, S. ; Nishitsuji, M. ; Nishii, K. ; Nakayama, M. ; Ishikawa, O.

Author_Institution

Electron. Res. Lab., Matsushita Electr. Ind. Co. Ltd., Moriguchi, Japan

fYear

1997

fDate

12-15 Oct. 1997

Firstpage

37

Lastpage

40

Abstract

A normally-off MODFET power MMIC has been developed for 1.9 GHz Japanese Personal Handy-phone System (PHS). High power added efficiency (PAE) of 41.7% at the output power (P/sub out/) of 22.0 dBm has been achieved under 3.0 V single-supply condition. The operating current is only 127 mA and the adjacent channel leakage power (P/sub adj/) is -58.2 dBc. Three FETs with their matching circuits are integrated on a very small die (1.1 mm/sup 2/) of the MMIC.

Keywords

HEMT integrated circuits; field effect MMIC; land mobile radio; power integrated circuits; telephone sets; 1.9 GHz; 127 mA; 3.0 V; 41.7 percent; Japanese Personal Handy-phone System; PHS; adjacent channel leakage power; normally-off MODFET power MMIC; operating current; output power; power added efficiency; single-supply condition; Circuits; FETs; HEMTs; Impedance; MMICs; MODFETs; Power generation; Switches; Transconductance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1997. Technical Digest 1997., 19th Annual

Conference_Location

Anaheim, CA, USA

ISSN

1064-7775

Print_ISBN

0-7803-4083-3

Type

conf

DOI

10.1109/GAAS.1997.628232

Filename

628232