Title :
Prediction of HBT ACPR using the Gummel Poon large signal model
Author :
Teeter, D.A. ; Bouthillette, S. ; Platzker, A. ; Forbes, A. ; Lichwala, S.
Author_Institution :
Adv. Device Center, Raytheon Electron., Andover, MA, USA
Abstract :
The ability of the Gummel Poon model to predict HBT ACPR is investigated. It is shown that with proper parameter extraction, the Gummel Poon model is capable of predicting ACPR for NADC and O-QPSK CDMA. Several examples of measured versus modeled performance are given along with a detailed discussion of the parameter extraction methodology.
Keywords :
heterojunction bipolar transistors; power amplifiers; radio equipment; semiconductor device models; ACPR; Gummel Poon large signal model; HBT; NADC; O-QPSK CDMA; RF power transistor amplifier; linearity; parameter extraction; Current measurement; Heterojunction bipolar transistors; Impedance; Parameter extraction; Power amplifiers; Predictive models; Radio frequency; Radiofrequency amplifiers; Scattering parameters; Tuners;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1997. Technical Digest 1997., 19th Annual
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-4083-3
DOI :
10.1109/GAAS.1997.628233
