Three stage 6–18 GHz high gain and high power amplifier based on GaN technology

Author

Mouginot, G. ; Ouarch, Z. ; Lefebvre, B. ; Heckmann, S. ; Lhortolary, J. ; Baglieri, D. ; Floriot, D. ; Camiade, M. ; Blanck, H. ; Le Pipec, M. ; Mesnager, D. ; Le Helleye, P.

Author_Institution

United Monolithic Semicond. (UMS), Orsay, France

fYear

2010

fDate

23-28 May 2010

Firstpage

1392

Lastpage

1395

Abstract

A monolithic three stage HPA has been developed for wide band applications. This MMIC is fabricated on UMS 0.25 μm GaN technology based on SiC substrate. At 18 GHz, the MMIC achieved in CW mode 10 W of output power with 20 dB linear gain and 20% power added efficiency. The HPA provided 6 to 10 W output power over 6 to 18 GHz with minimum small signal gain of 18 dB. These obtained performances are very promising and very close to the simulations; this will allow a very short term further improvement. This demonstration is the first MMIC on the UMS 0.25 μm GaN technology.

Keywords

MMIC amplifiers; gallium compounds; power amplifiers; wide band gap semiconductors; wideband amplifiers; GaN; MMIC; SiC; efficiency 20 percent; frequency 6 GHz to 18 GHz; gain 18 dB; gain 20 dB; high power amplifier; monolithic three stage HPA; power 6 W to 10 W; size 0.25 mum; wideband amplifier; Bandwidth; Frequency; Gallium nitride; High power amplifiers; Impedance; MMICs; Performance gain; Power generation; Voice mail; Wideband; Broadband GaN Amplifier; High Power; High gain; MMIC; Three stage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International

Conference_Location

Anaheim, CA

ISSN

0149-645X

Print_ISBN

978-1-4244-6056-4

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2010.5515897

Filename

5515897