0.15 micron gate AlInAs/GaInAs MHEMT fabricated on GaAs using deep-UV phase-shifting mask lithography

Author

Wang, Jerry G. ; Hur, Katerina Y. ; Studebaker, Lawrence G. ; Keppeler, Benjamin C. ; Quach, Alan T.

Author_Institution

Microwave Technol. Div., Hewlett-Packard Co., Santa Rosa, CA, USA

fYear

1997

fDate

12-15 Oct. 1997

Firstpage

74

Lastpage

77

Abstract

A 0.15 um gate process using a deep-UV stepper and phase-shifting mask lithography has been developed. This process eliminates the need for low throughput, direct write e-beam gate lithography. Using this process we have fabricated, for the first time, AlInAs/GaInAs MHEMTs on GaAs with f/sub t/´s up to 119 GHz. This optical approach for gate lithography is very attractive for manufacturing high volume, high performance, low cost GaAs integrated circuits.

Keywords

III-V semiconductors; aluminium compounds; field effect MIMIC; gallium arsenide; high electron mobility transistors; indium compounds; millimetre wave field effect transistors; phase shifting masks; photolithography; 0.15 micron; 119 GHz; AlInAs-GaInAs; III-V semiconductors; MHEMT; deep-UV phase-shifting mask lithography; deep-UV stepper; gate lithography; high volume integrated circuits; millimeter-wave FETs; Costs; Fabrication; Gallium arsenide; Lithography; Microwave technology; Millimeter wave technology; Phase shifters; Resists; Throughput; mHEMTs;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1997. Technical Digest 1997., 19th Annual

Conference_Location

Anaheim, CA, USA

ISSN

1064-7775

Print_ISBN

0-7803-4083-3

Type

conf

DOI

10.1109/GAAS.1997.628241

Filename

628241